The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Dec. 19, 2003
Shigeru Umeno, Tokyo, JP;
Masataka Hourai, Tokyo, JP;
Masakazu Sano, Tokyo, JP;
Shinichiro Miki, Tokyo, JP;
Shigeru Umeno, Tokyo, JP;
Masataka Hourai, Tokyo, JP;
Masakazu Sano, Tokyo, JP;
Shinichiro Miki, Tokyo, JP;
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Abstract
An active layer side silicon wafer is heat-treated in an oxidizing atmosphere to thereby form a buried oxide film therein. The active layer side silicon wafer is then bonded to a supporting side wafer with said buried oxide film interposed therebetween thus to fabricate an SOI wafer. Said oxidizing heat treatment is carried out under a condition satisfying the following formula:[]≦2.123×10exp(−(+273)),where, T is a temperature of the heat treatment, and [Oi] (atmos/cm) is an interstitial oxygen concentration.