The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Oct. 18, 2007
Shigenobu Maeda, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In formation of a source/drain region of an NMOS transistor, a gate-directional extension region <> of an Nblock region <> in an Nblock resist film <> prevents a well region <> located under the gate-directional extension region <> from implantation of an N-type impurity. A high resistance forming region, which is the well region <> having a possibility for implantation of an N-type impurity on a longitudinal extension of a gate electrode <>, can be formed as a high resistance forming region <A> narrower than a conventional high resistance forming region <A>. Thus, a semiconductor device having a partially isolated body fixed SOI structure capable of reducing body resistance and a method of manufacturing the same are obtained.