The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2009

Filed:

Jan. 18, 2005
Applicants:

Doug Van Den Broeke, Sunnyvale, CA (US);

Jang Fung Chen, Cupertino, CA (US);

Thomas Laidig, Point Richmond, CA (US);

Kurt E. Wampler, Sunnyvale, CA (US);

Stephen Hsu, Fremont, CA (US);

Inventors:

Doug Van Den Broeke, Sunnyvale, CA (US);

Jang Fung Chen, Cupertino, CA (US);

Thomas Laidig, Point Richmond, CA (US);

Kurt E. Wampler, Sunnyvale, CA (US);

Stephen Hsu, Fremont, CA (US);

Assignee:

ASML Masktools B. V., Ah Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06F 19/00 (2006.01); G21K 5/00 (2006.01); G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).


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