The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Dec. 08, 2005
Shiqun Gu, San Diego, CA (US);
Peter G. Mcgrath, Portland, OR (US);
James Elmer, Vancouver, WA (US);
Richard J. Carter, Dresden, DE;
Thomas Rueckes, Rockport, MA (US);
Shiqun Gu, San Diego, CA (US);
Peter G. McGrath, Portland, OR (US);
James Elmer, Vancouver, WA (US);
Richard J. Carter, Dresden, DE;
Thomas Rueckes, Rockport, MA (US);
Nantero, Inc., Woburn, MA (US);
Abstract
A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer) Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using Cl, F plasma) the portions of the hard mask which have been already partially etched away.