The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Jul. 06, 2005
Yun-yu Wang, Poughquag, NY (US);
Christian Lavoie, Ossining, NY (US);
Kevin E. Mello, Fishkill, NY (US);
Conal E. Murray, Yorktown Heights, NY (US);
Matthew W. Oonk, Poughkeepsie, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Christian Lavoie, Ossining, NY (US);
Kevin E. Mello, Fishkill, NY (US);
Conal E. Murray, Yorktown Heights, NY (US);
Matthew W. Oonk, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Silicide is protected during MC RIE etch by first forming an oxide film over the silicide and, after performing MC RIE etch, etching the oxide film. The oxide film is formed from a film of alloyed metal-silicon (M-Si) on the layer of silicide, then wet etching the metal-silicon. An ozone plasma treatment process can be an option to densify the oxide film. The oxide film may be etched by oxide RIE or wet etch, using 500:1 DHF.