The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Nov. 19, 2002
Applicants:
Masatake Nakano, Annaka, JP;
Shinichi Tomizawa, Annaka, JP;
Kiyoshi Mitani, Annaka, JP;
Inventors:
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention relates to a method of fabricating a bonded waferin which a bond waferand a base wafer, both of which are composed of silicon single crystal, are bonded while placing an oxide filmin between, and the bond waferis thinned. Use of modified chemically-etched wafers as both of the bond waferand base waferis successful in reducing an unbonded area UA therebetween after annealing for bonding, where the modified chemically-etched wafer refers to a wafer which is etched by alkali etching and succeeding acid etching, while setting etching amount larger in the alkali etching than in the acid etching.