The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
Jan. 31, 2007
Meikei Ieong, Wappingers Falls, NY (US);
Xiao HU Liu, Briarcliff Manor, NY (US);
Qiqing Christine Ouyang, Yorktown Heights, NY (US);
Siddhartha Panda, Kanpur, IN;
Haizhou Yin, Poughkeepsie, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Xiao Hu Liu, Briarcliff Manor, NY (US);
Qiqing Christine Ouyang, Yorktown Heights, NY (US);
Siddhartha Panda, Kanpur, IN;
Haizhou Yin, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
NMOS and PMOS device structures with separately strained channel regions and methods of their fabrication are disclosed. The source and the drain of the NMOS device is epitaxially grown of a material which causes a shift in the strain of the NMOS device channel in the tensile direction. While, the source and the drain of the PMOS device is epitaxially grown of a material which causes a shift in the strain of the PMOS device channel in the compressive direction.