The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2009
Filed:
May. 27, 2004
Ling Chen, Sunnyvale, CA (US);
Vincent W. Ku, Palo Alto, CA (US);
Hua Chung, San Jose, CA (US);
Christophe Marcadal, Sunnyvale, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Jenny Lin, Saratoga, CA (US);
Dien-yeh Wu, San Jose, CA (US);
Alan Ouye, San Mateo, CA (US);
Mei Chang, Saratoga, CA (US);
Ling Chen, Sunnyvale, CA (US);
Vincent W. Ku, Palo Alto, CA (US);
Hua Chung, San Jose, CA (US);
Christophe Marcadal, Sunnyvale, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Jenny Lin, Saratoga, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Alan Ouye, San Mateo, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (). The apparatus includes a canister () having a sidewall (), a top portion and a bottom portion. The canister () defines an interior volume () having an upper region () and a lower region (). In one embodiment, the apparatus further includes a heater () partially surrounding the canister (). The heater () creates a temperature gradient between the upper region () and the lower region (). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.