The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Nov. 09, 2005
Liang-tang Wang, Tainan, TW;
Chi-lin Chen, Hsinchu, TW;
I-hsuan Peng, Hsinchu, TW;
Jung-fang Chang, Tainan, TW;
Chin-jen Huang, Kaohsiung, TW;
Liang-Tang Wang, Tainan, TW;
Chi-Lin Chen, Hsinchu, TW;
I-Hsuan Peng, Hsinchu, TW;
Jung-Fang Chang, Tainan, TW;
Chin-Jen Huang, Kaohsiung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode, applying a first power to the first electrode for generating a plasma in the chamber, applying a second power to the second electrode during a nucleation stage of the polysilicon film for ion bombarding the surface of the substrate, and flowing an erosive gas into the chamber.