The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Jan. 31, 2005
Won-suk Ahn, Yongin-si, KR;
Moon-gyu Sung, Seoul, KR;
Seong-woon Choi, Suwon-si, KR;
Sung-yong Cho, Suwon-si, KR;
Jeong-yun Lee, Yongin-si, KR;
Won-suk Ahn, Yongin-si, KR;
Moon-gyu Sung, Seoul, KR;
Seong-woon Choi, Suwon-si, KR;
Sung-yong Cho, Suwon-si, KR;
Jeong-yun Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A photo mask for use in forming a pattern, such as a photoresist pattern, is corrected to compensate for discrepancies in the transmissivity of the photo mask which results in the pattern having a distribution of critical dimensions that is too great or which deviates too much from the target critical dimension of the pattern. The photo mask includes a transparent substrate, a light-shielding layer pattern defining transmission sites on the transparent substrate, and at least some of which sites have a relatively low transmissivity. The method of correcting the photo mask includes doping a front surface of the transparent substrate of the photo mask with ions. A predetermined number of the sites can be doped to narrow the distribution of the critical dimensions of the pattern formed using the photo mask, or all of the transmission sites of the photo mask can be doped to make the average of the critical dimensions of the pattern closer to the target critical dimension of the pattern.