The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Jul. 11, 2006
Tri Thanh Khuong, San Jose, CA (US);
Junwei Bao, Palo Alto, CA (US);
Jeffrey Alexander Chard, Sunnyvale, CA (US);
Wei Liu, Santa Clara, CA (US);
Ying Zhu, Cupertino, CA (US);
Sachin Deshpande, San Jose, CA (US);
Pranav Sheth, San Jose, CA (US);
Hong Qiu, Union City, CA (US);
Tri Thanh Khuong, San Jose, CA (US);
Junwei Bao, Palo Alto, CA (US);
Jeffrey Alexander Chard, Sunnyvale, CA (US);
Wei Liu, Santa Clara, CA (US);
Ying Zhu, Cupertino, CA (US);
Sachin Deshpande, San Jose, CA (US);
Pranav Sheth, San Jose, CA (US);
Hong Qiu, Union City, CA (US);
Tokyo Electron, Ltd., Tokyo, JP;
Abstract
In processing requests for wafer structure profile determination from optical metrology measurements, a plurality of measured diffraction signal of a plurality of structures formed on one or more wafers is obtained. The plurality of measured diffraction signals is distributed to a plurality of instances of a profile search module. The plurality of instances of the profile search model is activated in one or more processing threads of one or more computer systems. The plurality of measured diffraction signals is processed in parallel using the plurality of instances of the profile search module to determine profiles of the plurality of structures corresponding to the plurality of measured diffraction signals.