The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
May. 16, 2006
Shing-li Sung, Campbell, CA (US);
Wonseok Lee, Pleasanton, CA (US);
Judy Wang, Cupertino, CA (US);
Shawming MA, Sunnyvale, CA (US);
Shing-Li Sung, Campbell, CA (US);
Wonseok Lee, Pleasanton, CA (US);
Judy Wang, Cupertino, CA (US);
Shawming Ma, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A plasma etch process for successively different layers, including an anti-reflection coating (ARC), an amorphous carbon layer (ACL) and a dielectric layer, with successively different etch chemistries is performed in a single plasma reactor chamber. A first transition step is performed after etching the ARC by replacing the fluorine-containing process gas used in the ARC etch step with an inert species process gas. A flush step is performed after etching the ACL by replacing the hydrogen-containing process gas used in the ACL etch step with argon gas.