The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2009

Filed:

Jun. 24, 2005
Applicants:

Yung-long Hung, Taipei Hsien, TW;

Yuan-hsun Wu, Tao-Yuan Hsien, TW;

Chia-tsung Hung, Taipei Hsien, TW;

Inventors:

Yung-Long Hung, Taipei Hsien, TW;

Yuan-Hsun Wu, Tao-Yuan Hsien, TW;

Chia-Tsung Hung, Taipei Hsien, TW;

Assignee:

Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase-shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase-shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a clear recessed line pattern of second phase etched into the substrate and is disposed right next to the partially shielded mesa line pattern. The partially shielded mesa line pattern has a plurality of alternating 5%-10% transmittance light-shielding regions and clear regions of the first phase. The partially shielded mesa line pattern and the clear recessed line pattern have the same line width. The light that passes through the clear regions of the first phase and the light that passes through the clear recessed line pattern of second phase have a phase difference of 180 degree.


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