The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2009

Filed:

Jun. 23, 2005
Applicants:

Yung-feng Cheng, Kaohsiung, TW;

Yueh-lin Chou, Taichung, TW;

Chin-lung Lin, Hsinchu, TW;

Inventors:

Yung-Feng Cheng, Kaohsiung, TW;

Yueh-Lin Chou, Taichung, TW;

Chin-Lung Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for checking a phase shift angle of a PSM is described. A calibration curve of a characteristic value of lithography performance with respect to the phase shift angle of a type of PSM is acquired. The patterns of a PSM of the type to be checked are transferred to a photoresist layer to form photoresist patterns, and the characteristic value is measured. The real phase shift angle of the PSM is derived based on the characteristic value according to the calibration curve.


Find Patent Forward Citations

Cheng, Yung-Feng. (2009). Method for checking phase shift angle of phase shift mask, lithography process and phase shift mask (U.S. Patent No. 7498105). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7498105

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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