The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2009
Filed:
Sep. 26, 2006
Applicants:
Dai Fukushima, Kanagawa, JP;
Gaku Minamihaba, Kanagawa, JP;
Hiroyuki Yano, Kanagawa, JP;
Nobuyuki Kurashima, Kanagawa, JP;
Susumu Yamamoto, Oita, JP;
Inventors:
Dai Fukushima, Kanagawa, JP;
Gaku Minamihaba, Kanagawa, JP;
Hiroyuki Yano, Kanagawa, JP;
Nobuyuki Kurashima, Kanagawa, JP;
Susumu Yamamoto, Oita, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming a copper film above a surface of a substrate, forming on a polishing pad a material which contains copper, wherein said copper does not derive from said copper film, and after having formed the copper-containing material on said polishing pad, polishing said copper film by use of said polishing pad.