The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Dec. 28, 2005
Marc Hubertus Lorenz Van Der Velden, Eindhoven, NL;
Vadim Yevgenyevich Banine, Helmond, NL;
Bastiaan Matthias Mertens, 's-Gravenhage, NL;
Johannes Hubertus Josephina Moors, Helmond, NL;
Markus Weiss, Aalen, DE;
Bastiaan Theodoor Wolschrijn, Abcoude, NL;
Michiel D. Nijkerk, Amsterdam, NL;
Marc Hubertus Lorenz Van Der Velden, Eindhoven, NL;
Vadim Yevgenyevich Banine, Helmond, NL;
Bastiaan Matthias Mertens, 's-Gravenhage, NL;
Johannes Hubertus Josephina Moors, Helmond, NL;
Markus Weiss, Aalen, DE;
Bastiaan Theodoor Wolschrijn, Abcoude, NL;
Michiel D. Nijkerk, Amsterdam, NL;
ASML Netherlands B.V., Veldhoven, NL;
Carl Zeiss SMT AG, Oberkochen, DE;
Abstract
The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.