The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Sep. 09, 2005
S. M. Reza Sadjadi, Saratoga, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Ji Soo Kim, Pleasanton, CA (US);
Zhisong Huang, Fremont, CA (US);
Eric A. Hudson, Berkeley, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Ji Soo Kim, Pleasanton, CA (US);
Zhisong Huang, Fremont, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.