The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Jul. 20, 2006
Herbert L. Ho, New Windsor, NY (US);
Mahender Kumar, Fishkill, NY (US);
Qiqing Ouyang, Yorktown Heights, NY (US);
Paul A. Papworth, Wappingers Falls, NY (US);
Christopher D. Sheraw, Wappingers Falls, NY (US);
Michael D. Steigerwalt, Newburgh, NY (US);
Herbert L. Ho, New Windsor, NY (US);
Mahender Kumar, Fishkill, NY (US);
Qiqing Ouyang, Yorktown Heights, NY (US);
Paul A. Papworth, Wappingers Falls, NY (US);
Christopher D. Sheraw, Wappingers Falls, NY (US);
Michael D. Steigerwalt, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a a method of fabricating bipolar junction transistors (BJTs) on selected areas of a very thin buried oxide (BOX) using a conventional silicon-on-insulator (SOI) starting wafer with a thick BOX. The reduced BOX thickness underneath the bipolar devices allows for a significantly reduced substrate bias compatible with the CMOS to be applied while maintaining the advantages of a thick BOX underneath the CMOS.