The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Sep. 16, 2005
Applicants:
Chih-jen Mao, Tainan Hsien, TW;
Hui-shen Shih, Chang-Hua Hsien, TW;
Kuo-wei Yang, Hsin-Chu, TW;
Chun-han Chuang, Hsin-Chu, TW;
Chun-hung Hsia, Taipei Hsien, TW;
Inventors:
Chih-Jen Mao, Tainan Hsien, TW;
Hui-Shen Shih, Chang-Hua Hsien, TW;
Kuo-Wei Yang, Hsin-Chu, TW;
Chun-Han Chuang, Hsin-Chu, TW;
Chun-Hung Hsia, Taipei Hsien, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed thin film.