The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2009

Filed:

Jul. 14, 2006
Applicants:

Hsiao-tzu LU, Hsinchu, TW;

Burn-jeng Lin, Hsinchu, TW;

Chin-hsiang Lin, Hsinchu, TW;

Kuei-shun Chen, Hsinchu, TW;

Tsai-sheng Gau, Hsinchu, TW;

Inventors:

Hsiao-Tzu Lu, Hsinchu, TW;

Burn-Jeng Lin, Hsinchu, TW;

Chin-Hsiang Lin, Hsinchu, TW;

Kuei-Shun Chen, Hsinchu, TW;

Tsai-Sheng Gau, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of heating-treating a semiconductor wafer is provided. In one embodiment, a first layer is formed over a first side of a substrate. A second layer is formed over the first layer and over a second side of the substrate and the wafer is then flash annealed. In another embodiment, a first layer is formed over a first side of a substrate and over a second side of the substrate. A second layer is formed over the first layers and the wafer is then flash annealed.


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