The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Sep. 08, 2005
Cristian Paduraru, Fremont, CA (US);
Alan Jensen, White Salmon, WA (US);
David Schaefer, Vancouver, WA (US);
Robert Charatan, Portland, OR (US);
Tom Choi, San Jose, CA (US);
Cristian Paduraru, Fremont, CA (US);
Alan Jensen, White Salmon, WA (US);
David Schaefer, Vancouver, WA (US);
Robert Charatan, Portland, OR (US);
Tom Choi, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.