The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Dec. 26, 2003
Eiichi Kondoh, Yamanashi, JP;
Vincent Vezin, Kyoto, JP;
Kenichi Kubo, Kofu, JP;
Yoshinori Kureishi, Fuchu, JP;
Tomohiro Ohta, Nirasaki, JP;
Eiichi Kondoh, Yamanashi, JP;
Vincent Vezin, Kyoto, JP;
Kenichi Kubo, Kofu, JP;
Yoshinori Kureishi, Fuchu, JP;
Tomohiro Ohta, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Other;
Abstract
An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.