The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Nov. 10, 2006
Ji Soo Kim, Pleasanton, CA (US);
Conan Chiang, Los Altos, CA (US);
Daehan Choi, Sunnyvale, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Michael Goss, Mendon, MA (US);
Ji Soo Kim, Pleasanton, CA (US);
Conan Chiang, Los Altos, CA (US);
Daehan Choi, Sunnyvale, CA (US);
S. M. Reza Sadjadi, Saratoga, CA (US);
Michael Goss, Mendon, MA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for forming semiconductor devices is provided. A gate stack is formed over a surface of a substrate. A plurality of cycles for forming polymer spacers on sides of the gate stack is provided, where each cycle comprises providing a deposition phase that deposits material on the sides of the polymer spacer and over the surface of the substrate, and providing a cleaning phase that removes polymer over the surface of the substrate and shapes a profile of the deposited material. Dopant is implanted into the substrate using the polymer spacers as a dopant mask. The polymer spacers are removed.