The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7474420 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 06, 2009

Filed:

Mar. 30, 2006
Applicants:

Shifang LI, Pleasanton, CA (US);

Junwei Bao, Palo Alto, CA (US);

Vi Vuong, Fremont, CA (US);

Inventors:

Shifang Li, Pleasanton, CA (US);

Junwei Bao, Palo Alto, CA (US);

Vi Vuong, Fremont, CA (US);

Assignee:

Timbre Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/14 (2006.01); H01L 21/06 (2006.01); G06P 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffraction signal measured off the test structure is obtained. One or more features of the test structure are determined using the measured diffraction signal. The one or more features of the in-die structure are determined based on the one or more determined features of the test structure and the determined correlation.


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Li, Shifang. (2009). In-die optical metrology (U.S. Patent No. 7474420). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7474420

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