The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Aug. 20, 2007
Applicants:
Francois J. Henley, Aptos, CA (US);
Nathan Cheung, Albany, CA (US);
Inventors:
Francois J. Henley, Aptos, CA (US);
Nathan Cheung, Albany, CA (US);
Assignee:
Silicon Genesis Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract
A technique for forming a film of material () from a donor substrate (). The technique has a step of forming a stressed region in a selected manner at a selected depth () underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate () at the selected depth (), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.