The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Nov. 02, 2006
Gi-chung Kwon, Gyeonggi-Do, KR;
Nae-eung Lee, Gyeonggi-Do, KR;
Chang-ki Park, Busan, KR;
Chun-hee Lee, Gyeongsangbuk-Do, KR;
Duck-ho Kim, Seoul, KR;
Gi-Chung Kwon, Gyeonggi-Do, KR;
Nae-Eung Lee, Gyeonggi-Do, KR;
Chang-Ki Park, Busan, KR;
Chun-Hee Lee, Gyeongsangbuk-Do, KR;
Duck-Ho Kim, Seoul, KR;
Jusung Engineering Co., Ltd., Gwangju-si, KR;
Abstract
The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHF(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CHFand Hgases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.