The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Aug. 11, 2005
Nien-chung Chiang, Taipei, TW;
Chih-sheng Chang, Taipei Hsien, TW;
Chun-hsing Tung, Chang-Hua Hsien, TW;
Yi-tyng Wu, Chia-I, TW;
Huai-hsuan Tsai, Tai-Nan, TW;
Chi-rong Lin, Chang-Hua Hsien, TW;
Nien-Chung Chiang, Taipei, TW;
Chih-Sheng Chang, Taipei Hsien, TW;
Chun-Hsing Tung, Chang-Hua Hsien, TW;
Yi-Tyng Wu, Chia-I, TW;
Huai-Hsuan Tsai, Tai-Nan, TW;
Chi-Rong Lin, Chang-Hua Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer degas process is first performed within the degas chamber. The wafer is then transferred to the Ti/TiN sputter deposition chamber and deposition sputtering a layer of titanium onto the wafer. The wafer is transferred to the cooling chamber and gas cooling the wafer temperature down to 40-50° C. The wafer is then transferred to the aluminum sputter deposition chamber and deposition sputtering a layer of aluminum onto the wafer at 40-50° C. with a backside gas turned off. The deposited layer of aluminum over the wafer has a reflectivity of about 0.925 at wavelength of around 380 nm.