The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Jan. 28, 2005
Kunimasa Takahashi, Osaka, JP;
Makoto Kitabatake, Nara, JP;
Kenya Yamashita, Osaka, JP;
Masao Uchida, Osaka, JP;
Osamu Kusumoto, Nara, JP;
Ryoko Miyanaga, Nara, JP;
Kunimasa Takahashi, Osaka, JP;
Makoto Kitabatake, Nara, JP;
Kenya Yamashita, Osaka, JP;
Masao Uchida, Osaka, JP;
Osamu Kusumoto, Nara, JP;
Ryoko Miyanaga, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method for fabricating a semiconductor device includes the steps of implanting ions into a silicon carbide thin film () formed on a silicon carbide substrate (), heating the silicon carbide substrate in a reduced pressure atmosphere to form a carbon layer () on the surface of the silicon carbide substrate, and performing activation annealing with respect to the silicon carbide substrate in an atmosphere under a pressure higher than in the step of forming the carbon layer () and at a temperature higher than in the step of forming the carbon layer ().