The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
May. 21, 2004
Hitoshi Kato, Tokyo, JP;
Kohei Fukushima, Tokyo, JP;
Masato Yonezawa, Tokyo, JP;
Junya Hiraka, Tokyo, JP;
Hitoshi Kato, Tokyo, JP;
Kohei Fukushima, Tokyo, JP;
Masato Yonezawa, Tokyo, JP;
Junya Hiraka, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A CVD method for forming a silicon nitride film includes exhausting a process chamber () that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (), and a second period of stopping supply of the silane family gas.