The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Feb. 13, 2006
Applicants:
Hua-shu Wu, Hsinchu, TW;
Feng-chi Hung, Chu-Bei, TW;
Hung-lin Chen, Pingtung, TW;
Shih-chin Lee, Taipei, TW;
Inventors:
Hua-Shu Wu, Hsinchu, TW;
Feng-Chi Hung, Chu-Bei, TW;
Hung-Lin Chen, Pingtung, TW;
Shih-Chin Lee, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract
A double-diffused-drain metal-oxide-semiconductor device has a gate structure overlying a semiconductor substrate, a pair of insulator spacers on the sidewalls of the gate structure respectively, and a pair of floating non-insulator spacers embedded in the pair of insulator spacers respectively.
Quick Actions:
Wu, Hua-Shu. (2008). Double-diffused-drain mos device with floating non-insulator spacers (U.S. Patent No. 7453127). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7453127
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile