The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Aug. 28, 2007
Dureseti Chidambarrao, Weston, CT (US);
Ying LI, Newburgh, NY (US);
Rajeev Malik, Pleasantville, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Ying Li, Newburgh, NY (US);
Rajeev Malik, Pleasantville, NY (US);
Shreesh Narasimha, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a semiconductor device having dual nitride liners, a silicide layer, and a protective layer beneath one of the nitride liners for preventing the etching of the silicide layer. A first aspect of the invention provides a semiconductor device comprising a protective layer adjacent a first device, a first silicon nitride liner over the protective layer, a second silicon nitride liner adjacent a second device, and a first silicide layer adjacent the first device and a second silicide layer adjacent the second device, wherein a thickness is substantially the same in the first and second silicide layers.