The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Jan. 30, 2006
Chii-ming Wu, Taipei, TW;
Shih-wei Chou, Taipei, TW;
Gin Jei Wang, Taipei, TW;
Cheng-tung Lin, Jhudong Township, Hsinchu County, TW;
Chih-wei Chang, Hsin-Chu, TW;
Shau-lin Shue, Hsinchu, TW;
Chii-Ming Wu, Taipei, TW;
Shih-Wei Chou, Taipei, TW;
Gin Jei Wang, Taipei, TW;
Cheng-Tung Lin, Jhudong Township, Hsinchu County, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Shau-Lin Shue, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming nickel silicide includes degassing a semiconductor substrate that includes a silicon surface. After the degassing operation, the substrate is cooled prior to a metal deposition process, during a metal deposition process, or both. The cooling suppresses the temperature of the substrate to a temperature less than the temperature required for the formation of nickel silicide. Nickel diffusion is minimized during the deposition process. After deposition, an annealing process is used to urge the formation of a uniform silicide film. In various embodiments, the metal film may include a binary phase alloy containing nickel and a further element.