The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Mar. 29, 2005
Jisoo Kim, Pleasanton, CA (US);
Sangheon Lee, Sunnyvale, CA (US);
Binet A. Worsham, San Jose, CA (US);
Robert Charatan, Portland, OR (US);
S.m. Reza Sadjadi, Saratoga, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Sangheon Lee, Sunnyvale, CA (US);
Binet A. Worsham, San Jose, CA (US);
Robert Charatan, Portland, OR (US);
S.M. Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NFis provided into the plasma chamber. A plasma is formed from the NFgas. The dielectric layer is etched through the photoresist mask with the plasma from the NFgas.