The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Jul. 21, 2003
Brent A. Mcclure, Meridian, ID (US);
Casey R. Kurth, Eagle, ID (US);
Shenlin Chen, Boise, ID (US);
Debra K. Gould, Nampa, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-xuan Ping, Meridian, ID (US);
Fred D. Fishburn, Boise, ID (US);
Hongmei Wang, Boise, ID (US);
Brent A. McClure, Meridian, ID (US);
Casey R. Kurth, Eagle, ID (US);
Shenlin Chen, Boise, ID (US);
Debra K. Gould, Nampa, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-Xuan Ping, Meridian, ID (US);
Fred D. Fishburn, Boise, ID (US);
Hongmei Wang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si and the layer may limit the Si from contributing to formation of metal silicide material between the first electrode and the supporting surface. The layer may be a nitride layer and may be conductive or insulative. When conductive, the layer may exhibit a first conductivity greater than a second conductivity of the first electrode. The capacitor construction may be used in memory devices.