The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2008

Filed:

Dec. 14, 2006
Applicants:

Wen-chin Lin, Hsin-Chu, TW;

Denny Tang, Saratoga, CA (US);

Li-shyue Lai, Hsinchu, TW;

Chao-hsiung Wang, Hsin-Chu, TW;

Fan-shi Jordan Lai, Chia Yi, TW;

Inventors:

Wen-Chin Lin, Hsin-Chu, TW;

Denny Tang, Saratoga, CA (US);

Li-Shyue Lai, Hsinchu, TW;

Chao-Hsiung Wang, Hsin-Chu, TW;

Fan-Shi Jordan Lai, Chia Yi, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.


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