The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Aug. 26, 2005
Makoto Kitabatake, Nara, JP;
Osamu Kusumoto, Nara, JP;
Masao Uchida, Osaka, JP;
Kunimasa Takahashi, Osaka, JP;
Kenya Yamashita, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Koichi Hashimoto, Osaka, JP;
Makoto Kitabatake, Nara, JP;
Osamu Kusumoto, Nara, JP;
Masao Uchida, Osaka, JP;
Kunimasa Takahashi, Osaka, JP;
Kenya Yamashita, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Koichi Hashimoto, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device according to this invention includes: two level shift switches (A andB) each having first and second electrodes, a control electrode, a signal output electrode, and a first semiconductor region forming a transistor device section () which intervenes between the first electrode and the signal output electrode and is brought into or out of conduction according to a signal inputted to the control electrode and a resistor device section (Ra,Rb) which intervenes between the signal output electrode and the second electrode, the first semiconductor region comprising a wide bandgap semiconductor; and a diode () having a cathode-side electrode, an anode-side electrode, and a second semiconductor region comprising a wide bandgap semiconductor.