The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2008
Filed:
Sep. 19, 2006
Jerry Lai, Keelung, TW;
Chii-ming Wu, Taipei, TW;
Chih-wei Chang, Hsin-Chu, TW;
Shau-lin Shue, Hsinchu, TW;
Jerry Lai, Keelung, TW;
Chii-Ming Wu, Taipei, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Shau-Lin Shue, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a first silicon-containing layer comprising an element selected from the group consisting essentially of carbon and germanium wherein the silicon-containing layer has a first atomic percentage of the element to the element and silicon, a second silicon-containing layer comprising the element over the first silicon-containing layer, and a silicide layer on the second silicon-containing layer. The element in the second silicon-containing layer has a second atomic percentage of the element to the element and silicon, wherein the second atomic percentage is substantially lower than the first atomic percentage.