The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
Dec. 10, 2004
Srinivas Gandikota, Santa Clara, CA (US);
Madhu Moorthy, Santa Clara, CA (US);
Amit Khandelwal, Santa Clara, CA (US);
Avgerinos V. Gelatos, Redwood City, CA (US);
Mei Chang, Saratoga, CA (US);
Kavita Shah, Mountain View, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Madhu Moorthy, Santa Clara, CA (US);
Amit Khandelwal, Santa Clara, CA (US);
Avgerinos V. Gelatos, Redwood City, CA (US);
Mei Chang, Saratoga, CA (US);
Kavita Shah, Mountain View, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.