The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Jun. 16, 2005
Applicants:
Karsten Wieczorek, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Thomas Feudel, Radebeul, DE;
Inventors:
Karsten Wieczorek, Dresden, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Thomas Feudel, Radebeul, DE;
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
By predoping of a layer of deposited semiconductor gate material by incorporating dopants during the deposition process, a high uniformity of the dopant distribution may be achieved in the gate electrodes of CMOS devices subsequently formed in the layer of gate material. The improved uniformity of the dopant distribution results in reduced gate depletion and reduced threshold voltage shift in the transistors of the CMOS devices.