The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Dec. 05, 2002
Gareth Geoffrey Hougham, Ossining, NY (US);
S. Jay Chey, Ossining, NY (US);
James Patrick Doyle, Bronx, NY (US);
Xiao HU Liu, Croton On Hudson, NY (US);
Christopher V. Jahnes, Upper Saddle River, NJ (US);
Paul Alfred Lauro, Brewster, NY (US);
Nancy C. Labianca, Yalesville, CT (US);
Michael J. Rooks, Briarcliff Manor, NY (US);
Gareth Geoffrey Hougham, Ossining, NY (US);
S. Jay Chey, Ossining, NY (US);
James Patrick Doyle, Bronx, NY (US);
Xiao Hu Liu, Croton On Hudson, NY (US);
Christopher V. Jahnes, Upper Saddle River, NJ (US);
Paul Alfred Lauro, Brewster, NY (US);
Nancy C. LaBianca, Yalesville, CT (US);
Michael J. Rooks, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called 'smart materials' or 'responsive materials.' Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.