The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Sep. 22, 2005
Koji Maruyama, Nirasaki, JP;
Yusuke Hirayama, Nirasaki, JP;
Nozomi Hirai, Nirasaki, JP;
Takanori Mimura, Nirasaki, JP;
Koji Maruyama, Nirasaki, JP;
Yusuke Hirayama, Nirasaki, JP;
Nozomi Hirai, Nirasaki, JP;
Takanori Mimura, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and Obut not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, Oand HBr.