The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2008

Filed:

Feb. 28, 2006
Applicants:

Go Miya, Hachioji, JP;

Seiichiro Kanno, Kodaira, JP;

Naoshi Itabashi, Hachioji, JP;

Motohiko Yoshigai, Hikari, JP;

Junichi Tanaka, Hachioji, JP;

Masahito Mori, Tokorozawa, JP;

Naoyuki Kofuji, Tama, JP;

Go Saito, Hikari, JP;

Inventors:

Go Miya, Hachioji, JP;

Seiichiro Kanno, Kodaira, JP;

Naoshi Itabashi, Hachioji, JP;

Motohiko Yoshigai, Hikari, JP;

Junichi Tanaka, Hachioji, JP;

Masahito Mori, Tokorozawa, JP;

Naoyuki Kofuji, Tama, JP;

Go Saito, Hikari, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.


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