The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2008
Filed:
Mar. 30, 2006
Cem Basceri, Boise, ID (US);
Irina Vasilyeva, Boise, ID (US);
Ammar Derraa, Boise, ID (US);
Philip H. Campbell, Meridian, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Cem Basceri, Boise, ID (US);
Irina Vasilyeva, Boise, ID (US);
Ammar Derraa, Boise, ID (US);
Philip H. Campbell, Meridian, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCland at least one silane are first fed to the chamber at or above a first volumetric ratio of TiClto silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCland at least one silane are fed to the chamber at or below a second volumetric ratio of TiClto silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.