The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Nov. 14, 2005
Li-te Lin, Hsin-chu County, TW;
Yui Wang, Shalu Township, Taichung County, TW;
Huan-just Lin, Hsin-chu County, TW;
Yuan-hung Chiu, Taipei, TW;
Hun-jan Tao, Hsinchu, TW;
Li-Te Lin, Hsin-chu County, TW;
Yui Wang, Shalu Township, Taichung County, TW;
Huan-Just Lin, Hsin-chu County, TW;
Yuan-Hung Chiu, Taipei, TW;
Hun-Jan Tao, Hsinchu, TW;
Taiwan Semiconductor Mfg. Co., Ltd., Hsin-Chu, TW;
Abstract
A novel, in-situ plasma treatment method for eliminating or reducing striations caused by standing waves in a photoresist mask, is disclosed. The method includes providing a photoresist mask on a BARC (bottom anti-reflective coating) layer that is deposited on a feature layer to be etched, etching the BARC layer and the underlying feature layer according to the pattern defined by the photoresist mask, and subjecting the photoresist mask to a typically argon or hydrogen bromide plasma before, after, or both before and after etching of the BARC layer prior to etching of the feature layer. Preferably, the photoresist mask is subjected to the plasma both before and after etching of the BARC layer.