The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2008

Filed:

Feb. 18, 2005
Applicants:

Vi Vuong, Fremont, CA (US);

Junwei Bao, Sunnyvale, CA (US);

Joerg Bischoff, Illmenau, DE;

Inventors:

Vi Vuong, Fremont, CA (US);

Junwei Bao, Sunnyvale, CA (US);

Joerg Bischoff, Illmenau, DE;

Assignee:

Timbre Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/30 (2006.01); G01B 11/24 (2006.01); G01B 3/22 (2006.01); G01B 13/16 (2006.01); G01B 15/04 (2006.01); G01B 17/06 (2006.01); G01B 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The top-view profiles of repeating structures in a wafer are characterized and parameters to represent variations in the top-view profile of the repeating structures are selected. An optical metrology model is developed that includes the selected top-view profile parameters of the repeating structures. The optimized optical metrology model is used to generate simulated diffraction signals that are compared to measured diffraction signals.


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