The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Jan. 26, 2005
Fei-yun Chen, Hinchu, TW;
Ni-hwi Kuan, Hsinchu, TW;
Yuh-hwa Chang, Shulin, TW;
Yuan-pang Lee, Tongxiao, TW;
Yuan-ko Hwang, Hualien, TW;
Shuh-shun Chen, Tainan, TW;
Fei-Yun Chen, Hinchu, TW;
Ni-Hwi Kuan, Hsinchu, TW;
Yuh-Hwa Chang, Shulin, TW;
Yuan-Pang Lee, Tongxiao, TW;
Yuan-Ko Hwang, Hualien, TW;
Shuh-Shun Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous silicon layer is resistant to attack during the post-etch solvent stripping operation due to the oxidation of exposed portions of the amorphous silicon layer by use of an oxygen plasma.