The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2008
Filed:
Apr. 02, 2004
Anna M. Minvielle, San Jose, CA (US);
Cyrus E. Tabery, Santa Clara, CA (US);
Hung-eil Kim, San Jose, CA (US);
Jongwook Kye, Pleasanton, CA (US);
Anna M. Minvielle, San Jose, CA (US);
Cyrus E. Tabery, Santa Clara, CA (US);
Hung-eil Kim, San Jose, CA (US);
Jongwook Kye, Pleasanton, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a plurality of contact holes of varying pitch and density in a contact layer of an integrated circuit device is provided. The plurality of contact holes can include a plurality of regularly spaced contact holes having a first pitch along a first direction and a plurality of semi-isolated contact holes having a second pitch along a second direction. A double-dipole illumination source can transmit light energy through a mask having a pattern corresponding to a desired contact hole pattern. The double-dipole illumination source can include a first dipole aperture, which is oriented and optimized for patterning the regularly spaced contact holes, and a second dipole aperture, which is oriented substantially orthogonal to the first dipole aperture and optimized for patterning the plurality of semi-isolated contact holes. The contact layer can be etched using the patterned photoresist layer.