The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Apr. 03, 2007
Masao Uchida, Osaka, JP;
Makoto Kitabatake, Nara, JP;
Osamu Kusumoto, Nara, JP;
Kenya Yamashita, Osaka, JP;
Kunimasa Takahashi, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Masao Uchida, Osaka, JP;
Makoto Kitabatake, Nara, JP;
Osamu Kusumoto, Nara, JP;
Kenya Yamashita, Osaka, JP;
Kunimasa Takahashi, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the <11-20> direction. A gate electrode, a source electrode and other elements are arranged such that in a channel region, the dominating current flows along a miscut direction. In the present invention, a gate insulating film is formed and then heat treatment is performed in an atmosphere containing a group-V element. In this way, the interface state density at the interface between the silicon carbide layer and the gate insulating film is reduced. As a result, the electron mobility becomes higher in a miscut direction A than in the direction perpendicular to the miscut direction A.