The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Mar. 09, 2006
Applicants:
Boon-yong Ang, Cupertino, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Simon S. Chan, Saratoga, CA (US);
Harpreet K. Sachar, Milpitas, CA (US);
Mark Randolph, San Jose, CA (US);
Inventors:
Boon-Yong Ang, Cupertino, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Simon S. Chan, Saratoga, CA (US);
Harpreet K. Sachar, Milpitas, CA (US);
Mark Randolph, San Jose, CA (US);
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method includes forming at least a portion of a semiconductor device in a processing chamber containing oxygen and removing substantially all of the oxygen from the processing chamber. The method further includes forming remaining portions of the semiconductor device in the processing chamber without the presence of oxygen.