The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2008

Filed:

Sep. 15, 2004
Applicants:

Jen-chieh Chang, Hsinchu, TW;

Shih-chi Lai, Hsinchu, TW;

Yi-fu Chung, Hsinchu, TW;

Chih-shin Tsai, Hsinchu, TW;

Inventors:

Jen-Chieh Chang, Hsinchu, TW;

Shih-Chi Lai, Hsinchu, TW;

Yi-Fu Chung, Hsinchu, TW;

Chih-Shin Tsai, Hsinchu, TW;

Assignee:

Mosel Vitelic, Inc., Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the present invention provide a method for reclaiming and reusing a wafer. In one embodiment, a method for reclaiming a wafer comprises providing a used, nonproductive wafer having a semiconductor substrate and a polysilicon layer formed on the semiconductor substrate; oxidizing a first part of the polysilicon layer to form a first oxide layer; removing the first oxide layer; and oxidizing a second part of the polysilicon layer to form a second oxide layer on the used wafer which is to be used as a reclaimed wafer. The nonproductive wafer is used to improve the quality of a deposition process of the polysilicon layer on one or more productive wafers.


Find Patent Forward Citations

Loading…